BCX58
器件描述:NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
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器件资料摘要:
Semiconductor Group 1
NPN Silicon AF Transistors BCX 58
BCX 59
5.91
Maximum Ratings
Type Ordering CodeMarking Package
1)
Pin Configuration
BCX 58 VIII
BCX 58 IX
BCX 58 X
BCX 59 VIII
BCX 59 IX
BCX 59 X
Q62702-C619
Q62702-C620
Q62702-C621
Q62702-C623
Q62702-C624
Q62702-C625
– TO-92C B E
1 2 3
1)
For detailed information see chapter Package Outlines.
2)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 V
Peak collector current ICM
Collector current IC mA
Junction temperature Tj ˚C
Total power dissipation, TC = 70 ˚C Ptot mW
Storage temperature range Tstg
Collector-base voltage VCB0
Thermal Resistance
Junction - ambient Rth JA ≤ 250 K/W
100
200
500
150
– 65 … + 150
Emitter-base voltage VEB0
32 45
32 45
BCX 58 BCX 59
Peak base current IBM 200
7
Junction - case
2)
Rth JC ≤ 160
a71 High current gain
a71 Low collector-emitter saturation voltage
a71 Complementary types: BCX 78, BCX 79 (PNP)
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2
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