Semiconductor Group 24 03.96
Type Ordering Code
BSM 111 AR C67076-S1013-A2
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage V
DS
100 V
Drain-gate voltage, R
GS
= 20 kΩ V
DGR
100
Gate-source voltage V
GS
± 20
Continuous drain current, T
C
= 25 ˚C I
D
200 A
Pulsed drain current, T
C
= 25 ˚C I
D puls
600
Operating and storage temperature range T
j
, T
stg
– 55 … + 150 ˚C
Power dissipation, T
C
= 25 ˚C P
tot
700 W
Thermal resistance
Chip-case
R
thJC
≤ 0.18 K/W
Insulation test voltage
2)
, t = 1 min. V
is
2500 V
ac
Creepage distance, drain-source – 16 mm
Clearance, drain-source – 11
DIN humidity category, DIN 40 040 – F –
IEC climatic category, DIN IEC 68-1 – 55/150/56
1)
See chapter Package Outline and Circuit Diagrams.
2)
Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with
DIN 50 014, IEC 146, para. 492.1.
SIMOPAC
®
Module BSM 111 AR
V
DS
= 100 V
I
D
= 200 A
R
DS(on)
= 8.5 mΩ
a71 Power module
a71 Single switch
a71 N channel
a71 Enhancement mode
a71 Package with insulated metal base plate
a71 Package outline/Circuit diagram: 1
1)