BAR63-03
器件描述：Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：52.17KB，共4页
Sponsor by e络盟器件资料摘要：
BAR 63-03W
Semiconductor Group 1 Edition A01, 22.07.94
Type Marking Ordering Code
(tape and reel)
Pin Configuration
1 2
Package
1)
BAR 63-03W G Q62702-A1025 A C SOD-323
Maximum Ratings
Parameter Symbol BAR 63-03W Unit
Reverse voltage VR 50 V
Forward current I
F
100 mA
Total Power dissipation T
S
≤ 111°C P
tot
250 mW
Operating temperature range T
op
-55 +150°C °C
Storage temperature range T
stg
-55...+150°C °C
Thermal Resistance
Junction-ambient
1)
R
th JA
≤ 235 K/W
Junction-soldering point R
th JS
≤ 155 K/W
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Silicon PIN Diode
G6c PIN diode for high speed switching of RF signals
G6c Low forward resistance
G6c Very low capacitance
G6c For frequencies up to 3 GHz
Semiconductor Group 1 Edition A01, 22.07.94
Type Marking Ordering Code
(tape and reel)
Pin Configuration
1 2
Package
1)
BAR 63-03W G Q62702-A1025 A C SOD-323
Maximum Ratings
Parameter Symbol BAR 63-03W Unit
Reverse voltage VR 50 V
Forward current I
F
100 mA
Total Power dissipation T
S
≤ 111°C P
tot
250 mW
Operating temperature range T
op
-55 +150°C °C
Storage temperature range T
stg
-55...+150°C °C
Thermal Resistance
Junction-ambient
1)
R
th JA
≤ 235 K/W
Junction-soldering point R
th JS
≤ 155 K/W
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Silicon PIN Diode
G6c PIN diode for high speed switching of RF signals
G6c Low forward resistance
G6c Very low capacitance
G6c For frequencies up to 3 GHz