2SB1427
Transistors
Power transistor (−20V, −2A)
2SB1427
!Features
1) Low saturation voltage,
typically VCE(sat) = −0.5V at IC/IB = −1A / −50mA.
2) Excellent DC current gain characteristics.
!External dimensions (Units : mm)
(3) Emitter
(2) Collector
(1) Base
EIAJ : SC-62
1.5
0.4
1.5 0.4
1.60.53.0
0.41.5
(3)
4.5
(1)
(2)
0.5
4.0
2.51.0
ROHM : MPT3
!Absolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Limits
−20
−20
−6
−2
0.5
2
Unit
V
V
V
A(DC)
−3 A(Pulse)
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature Tj
Tstg
150
−55 ~ +150 °CStorage temperature
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40×40×0.7mm ceramic board.
∗1
∗2
!Packaging specifications and hFE
Type 2SB1427
MPT3
E
T100
BJ
1000
Package
hFE
Code
Basic ordering unit (pieces)
Marking
Denotes hFE∗
∗
!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
−20
−20
−6
−
−
390
−
−
−
−
−
−
−
−
90
30
−
−
−
−0.5
−0.5
820
−
−
V
V
V
µA
µA
−
MHz
pF
IC = −50µA
IC = −1mA
IE = −50µA
VCB = −16V
VEB = −5V
−−0.5 V IC/IB = −1A/−500mA
VCE/IC = −6V/−0.5A
VCE = −10V , IE = 10mA , f= 30MHz
VCB = −10V , IE = 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.∗
∗