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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

2N7219

器件描述:N?CHANNEL POWER MOSFET
器件厂商:SEME-LAB [Seme LAB]
文件大小:19.63KB,共2页
Sponsor by e络盟
器件资料摘要:
Document Number 4145
Issue 1
IRFM240
2N7219
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
V
GS
Gate – Source Voltage
I
D
Continuous Drain Current @ V
GS
= 10V , T
C
= 25°C
@ V
GS
= 10V , T
C
= 100°C
I
DM
Pulsed Drain Current
P
D
Max. Power Dissipation @ T
C
= 25°C
Linear Derating Factor
I
AR
Avalanche Current
1
dv / dt Peak Diode Recovery
2
R
θJC
Thermal Resistance Junction – Case
R
θJA
Thermal Resistance Junction – Ambient
T
J
, T
STG
Operating Junction and Storage Temperature Range
T
L
Lead Temperature (1.6mm from case for 10s)
±20V
18A
11A
72A
125W
1.0W / °C
18
5.0V / ns
1.0°C / W
48°C / W
–55 to 150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches)
123
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
3.78 (0.149)
Dia.
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
30.
35 (
1
.
195)
31.
40 (
1
.
235)
16.
89 (
0
.
665)
17.
40 (
0
.
685)
13.
59 (
0
.
5
35)
13.
84 (
0
.
5
45)
2
0
.
07 (0.
790)
2
0
.
32 (0.
800)
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
TO–254AA – Isolated Metal Package
Pin 1 – Drain Pin 2 – Source Pin 3 – Gate
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise stated)
1) V
DD
= 50V , Starting T
J
= 25°C , L ≥ 1.3mH , V
GS
= 10V , Peak I
L
= 18A
2) I
SD
≤ 18A , di/dt ≤ 150A / µS , V
DD
≤ 200V , T
J
≤ 150°C
N–CHANNEL
POWER MOSFET
FEATURES
N–CHANNEL MOSFET
HIGH VOLTAGE
HERMETIC ISOLATED TO-254 PACKAGE
ELECTRICALLY ISOLATED
V
DSS
200V
I
D(cont)
18A
R
DS(on)
0.18Ω