2SA608
器件描述：Low-Frequency General-Purpose Amplifier Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：40.84KB，共4页
Sponsor by e络盟器件资料摘要：
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
Low-Frequency
General-Purpose Amplifier Applications
Ordering number:ENN6324
2SA608N/2SC536N
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10700TS (KOTO) TA-2543 No.6324–1/4
Package Dimensions
unit:mm
2164
[2SA608N/2SC536N]
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Emitter
2 : Collector
3 : Base
SANYO : NPA-WA
Applications
· Capable of being used in the low frequency to high
frequency range.
Features
· Large current capacity and wide ASO.
( ) : 2SA608N
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Continued on next page.
* The 2SA608N/2SC536N are classified by 1mA h
FE
as follow
4.0max
1.4max
0.45
0.5
0.6
4.5
14.013.7
1.27
2.5 2.5
0.45 0.44
123
4.5
3.7 3.5
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
06)05–(V
egatloVrettimE-ot-rotcello
OEC
05)–(V
egatloVesaB-ot-rettimEV
OBE
6)–(V
tnerruCrotcelloCI
C
051)–(Am
)esluP(tnerruCrotcello
PC
004)– m
noitapissiDrotcelloCP
C
005Wm
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
knaRFG
h
EF
023ot061065ot082
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V04)–(=
E
0=1.0)–(Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V5)–(=
C
0 .0)– µ
niaGtnerruCCD
h
EF
1V
EC
I,V6)–(=
C
Am1)–(=*061*065
h
EF
2V
EC
I,V6)–(=
C
Am1.0)–(=07
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
Low-Frequency
General-Purpose Amplifier Applications
Ordering number:ENN6324
2SA608N/2SC536N
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10700TS (KOTO) TA-2543 No.6324–1/4
Package Dimensions
unit:mm
2164
[2SA608N/2SC536N]
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Emitter
2 : Collector
3 : Base
SANYO : NPA-WA
Applications
· Capable of being used in the low frequency to high
frequency range.
Features
· Large current capacity and wide ASO.
( ) : 2SA608N
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Continued on next page.
* The 2SA608N/2SC536N are classified by 1mA h
FE
as follow
4.0max
1.4max
0.45
0.5
0.6
4.5
14.013.7
1.27
2.5 2.5
0.45 0.44
123
4.5
3.7 3.5
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
06)05–(V
egatloVrettimE-ot-rotcello
OEC
05)–(V
egatloVesaB-ot-rettimEV
OBE
6)–(V
tnerruCrotcelloCI
C
051)–(Am
)esluP(tnerruCrotcello
PC
004)– m
noitapissiDrotcelloCP
C
005Wm
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
knaRFG
h
EF
023ot061065ot082
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V04)–(=
E
0=1.0)–(Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V5)–(=
C
0 .0)– µ
niaGtnerruCCD
h
EF
1V
EC
I,V6)–(=
C
Am1)–(=*061*065
h
EF
2V
EC
I,V6)–(=
C
Am1.0)–(=07