BUZ80
BUZ80FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
n TYPICAL R
DS(on)
= 3.3 Ω
n AVALANCHE RUGGEDNESS TECHNOLOGY
n 100% AVALANCHE TESTED
n REPETITIVE AVALANCHE DATA AT 100
o
C
n LOW INPUT CAPACITANCE
n LOW GATE CHARGE
n APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING
n SWITCH MODE POWER SUPPLIES (SMPS)
n CONSUMER AND INDUSTRIAL LIGHTING
n DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
INTERNAL SCHEMATIC DIAGRAM
TYPE VDSS RDS(on) ID
BUZ80
BUZ80FI
800 V
800 V
<4Ω
<4Ω
3.4 A
2.1 A
1
2
3
TO-220 ISOWATT220
November 1996
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BUZ80 BUZ80FI
V
DS
Drain-source Voltage (V
GS
=0) 800 V
V
DG R
Drain- gate Voltage (R
GS
=20kΩ)8
GS Gate-source Voltage ± 20 V
I
D
Drain Current (continuous) at T
c
=25
o
C3.42.1A
Drain Current (continuous) at T
c
=100
o
C21 3
IDM(•) Drain Current (pulsed) 13 13 A
Ptot Total Dissipation at Tc =25
o
C 100 40 W
Derating Factor 0.8 0.32 W/
o
C
VISO Insulation Withstand Voltage (DC)  2000 V
Tstg Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
(•) Pulse width limited by safe operating area
1
2
3
1/10