Semiconductor Group 1 07/96
BUZ 80A
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
Pin 1 Pin 2 Pin 3
G D S
Type V
DS
I
D
R
DS(on)
Package Ordering Code
BUZ 80A 800 V 3 A 3 Ω TO-220 AB C67078-A1309-A3
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
800 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
800
Continuous drain current
T
C
= 50 °C
I
D
3
A
Pulsed drain current
T
C
= 25 °C
I
Dpuls
12
Gate source voltage V
GS
± 20 V
Power dissipation
T
C
= 25 °C
P
tot
75
W
Operating temperature T
j
-55 ... ...+ 150 °C
Storage temperature T
stg
-55 ... ...+ 150
Thermal resistance, chip case R
thJC
≤ 1.67 K/W
Thermal resistance, chip to ambient R
thJA
75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56