BUZ72A
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
n TYPICAL R
DS(on)
= 0.23 Ω
n AVALANCHE RUGGED TECHNOLOGY
n 100% AVALANCHE TESTED
n REPETITIVE AVALANCHE DATA AT 100
o
C
n LOW GATE CHARGE
n HIGH CURRENT CAPABILITY
n 175
o
C OPERATING TEMPERATURE
APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING
n SOLENOID AND RELAY DRIVERS
n REGULATORS
n DC-DC & DC-AC CONVERTERS
n MOTOR CONTROL, AUDIO AMPLIFIERS
n AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE VDSS RDS(on) ID
BUZ72A 100 V < 0.25 Ω 11 A
1
2
3
TO-220
June 1993
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0) 100 V
VDG R Drain- gate Voltage (RGS =20kΩ) 100 V
V
GS
Gate-source Voltage ± 20 V
I
D
Drain Current (continuous) at T
c
=25
o
C11A
DM Drain Current (pulsed) 44 A
P
tot
Total Dissipation at T
c
=25
o
C70W
stg
Storage Temperature -65 to 175
o
C
Tj Max. Operating Junction Temperature 175
o
C
DIN Humidity Category (DIN 40040) E
IEC Climatic Category (DIN IEC 68-1) 55/150/56
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