PRODUCT SPECIFICATIONS

SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997 TYPE: BUZ50A
PH: (561) 283-4500 FAX: (561) 286-8914
Website: http://www.semi-tech-inc.com

CASE OUTLINE: TO-220AB
HIGH VOLTAGE POWER MOSFET
N-CHANNEL

ABSOLUTE MAXIMUM RATING:
Drain – Source Voltage VDSS 1000 Vdc
Drain – Gate Voltage VDGR 1000 Vdc
Drain Current – Continuous ID 2.5 Adc
Drain Current – Pulsed IDM 10 Adc
Gate – Source Voltage VGS ±20 Vdc
Power Dissipation PD 75 Watts
Inductive Current IL Adc
Operating and Storage Temperature TJ & Tstg -55 to +150 °C
Lead Temperature From Case TL °C

ELECTRICAL CHARACTERISTICS TA @ 25 C
Parameters Symbol Test Conditions Min Typ Max Unit
Drain Source
Breakdown Voltage
BVDSS VGS = 0V, ID = .25mA 1000 Vdc
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1.0mA 2.1 4.0 Vdc

Gate – Body Leakage
Current
IGSS VGS = ± 20V, VDS = 0V 100 nA
Zero Gate Voltage
Drain Current
IDSS VDS = 1000V, VGS = 0V,
VDS = 1000V, VGS = 0V, TJ = 125°C
0.25
1.0
mA
mA
On State Drain Current ID(on) Adc

Drain Source On-
Resistance
rDS(on) VGS = 10V, ID = 1.5A 5.0 Ohms
Forward
Transconductance
gFS VDS = 25V, ID = 1.5A 0.7 mhos
Drain-Source On
Voltage
VDS(on) Vdc

Drain-Source-On
Voltage
VDS(on) Vdc
Input Capacitance Ciss 2100 pF

Output Capacitance Coss 120 pF

Reverse Transfer
Capacitance
Crss


VGS = 0V, VDS = 25V, f = 1 MHz
50 pF

Page 1 of 2