Semiconductor
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
BUZ45
9.6A, 500V, 0.600 Ohm, N-Channel Power
MOSFET
IThis is an N-Channel enhancement mode silicon gate
power field effect transistor designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17435.
Features
• 9.6A, 500V
•r
DS(ON)
= 0.600Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Symbol
Packaging
JEDEC TO-204AA
Ordering Information
PART NUMBER PACKAGE BRAND
BUZ45 TO-204AA BUZ45
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
Data Sheet October 1998 File Number 2257.1
[ /Title
(BUZ45)
/Subject
(9.6A,
500V,
0.600
Ohm, N-
Channel
Power
MOS-
FET)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FET.
TO-
204AA)
/Creator
()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
pdfmark