Semiconductor
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
BUZ41A
4.5A, 500V, 1.500 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17415.
Features
• 4.5A, 500V
•r
DS(ON)
= 1.500Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
BUZ41A TO-220AB BUZ41A
NOTE: When ordering, use the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet October 1998 File Number 2256.1
[ /Title
(BUZ41
A)
/Sub-
ject
(4.5A,
500V,
1.500
Ohm,
N-Chan-
nel
Power
MOS-
FET)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Chan-
nel
Power
MOS-
FET,
TO-
220AB)
/Cre-
ator ()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/Use-