Semiconductor Group 1 07/96
BUZ 346 S2
Not for new design
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1 Pin 2 Pin 3
G D S
Type V
DS
I
D
R
DS(on)
Package Ordering Code
BUZ 346 S2 60 V 58 A 0.018 Ω TO-218 AA C67078-S3120-A4
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
C
= 73 °C
I
D
58
A
Pulsed drain current
T
C
= 25 °C
I
Dpuls
232
Avalanche current,limited by T
jmax
I
AR
58
Avalanche energy,periodic limited by T
jmax
E
AR
4.5 mJ
Avalanche energy, single pulse
I
D
= 58 A, V
DD
= 25 V, R
GS
= 25 Ω
L = 21.4 µH, T
j
= 25 °C
E
AS
72
Gate source voltage V
GS
± 20 V
Power dissipation
T
C
= 25 °C
P
tot
170
W
Operating temperature T
j
-55 ... + 150 °C
Storage temperature T
stg
-55 ... + 150
Thermal resistance, chip case R
thJC
≤ 0.74 K/W
Thermal resistance, chip to ambient R
thJA
≤ 75
DIN humidity category, DIN 40 040 C
IEC climatic category, DIN IEC 68-1 55 / 150 / 56