Semiconductor Group 1 07/96
BUZ 325
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1 Pin 2 Pin 3
G D S
Type VDS ID RDS(on) Package Ordering Code
BUZ 325 400 V 12.5 A 0.35 Ω TO-218 AA C67078-S3118-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
TC = 27 °C
ID
12.5
A
Pulsed drain current
TC = 25 °C
IDpuls
50
Avalanche current,limited by Tjmax IAR 12.5
Avalanche energy,periodic limited by Tjmax EAR 13 mJ
Avalanche energy, single pulse
ID = 12.5 A, VDD = 50 V, RGS = 25 Ω
L = 7.5 mH, Tj = 25 °C
EAS
670
Gate source voltage VGS ± 20 V
Power dissipation
TC = 25 °C
Ptot
125
W
Operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC ≤ 1 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56