Semiconductor Group 1 07/96
BUZ 326
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1 Pin 2 Pin 3
G D S
Type V
DS
I
D
R
DS(on)
Package Ordering Code
BUZ 326 400 V 10.5 A 0.5 Ω TO-218 AA C67078-S3112-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
C
= 27 °C
I
D
10.5
A
Pulsed drain current
T
C
= 25 °C
I
Dpuls
42
Avalanche current,limited by T
jmax
I
AR
10.5
Avalanche energy,periodic limited by T
jmax
E
AR
13 mJ
Avalanche energy, single pulse
I
D
= 10.5 A, V
DD
= 50 V, R
GS
= 25 Ω
L = 9.05 mH, T
j
= 25 °C
E
AS
570
Gate source voltage V
GS
± 20 V
Power dissipation
T
C
= 25 °C
P
tot
125
W
Operating temperature T
j
-55 ... + 150 °C
Storage temperature T
stg
-55 ... + 150
Thermal resistance, chip case R
thJC
≤ 1 K/W
Thermal resistance, chip to ambient R
thJA
75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56