Semiconductor Group 1 07/96
BUZ 255
Not for new design
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1 Pin 2 Pin 3
G D S
Type V
DS
I
D
R
DS(on)
Package Ordering Code
BUZ 255 200 V 13 A 0.24 Ω TO-220 AB C67078-S1406-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
C
= 31 °C
I
D
13
A
Pulsed drain current
T
C
= 25 °C
I
Dpuls
52
Avalanche current,limited by T
jmax
I
AR
13
Avalanche energy,periodic limited by T
jmax
E
AR
9 mJ
Avalanche energy, single pulse
I
D
= 13 A, V
DD
= 50 V, R
GS
= 25 Ω
L = 1.89 mH, T
j
= 25 °C
E
AS
200
Gate source voltage V
GS
± 20 V
Power dissipation
T
C
= 25 °C
P
tot
95
W
Operating temperature T
j
-55 ... + 150 °C
Storage temperature T
stg
-55 ... + 150
Thermal resistance, chip case R
thJC
≤ 1.32 K/W
Thermal resistance, chip to ambient R
thJA
75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56