4-5 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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BUZ11
30A, 50V, 0.040 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9771.
Features
• 30A, 50V
•r
DS(ON)
= 0.040Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
BUZ11 TO-220AB BUZ11
NOTE: When ordering, use the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
June 1999 File Number 2253.2Data Sheet