Semiconductor Group 1 29/Jan/1998
BUZ 104 SL
SPP13N05L
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available Pin 1 Pin 2 Pin 3
G D S
Type VDS ID RDS(on) Package Ordering Code
BUZ 104 SL 55 V 12.5 A 0.12 Ω TO-220 AB Q67040-S4006-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
8.8
12.5
A
Pulsed drain current
TC = 25 °C
IDpuls
50
Avalanche energy, single pulse
ID = 12.5 A, VDD = 25 V, RGS = 25 Ω
L = 666 µH, Tj = 25 °C
EAS
52
mJ
Avalanche current,limited by Tjmax IAR 12.5 A
Avalanche energy,periodic limited by Tjmax EAR 3.5 mJ
Reverse diode dv/dt
IS = 12.5 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
dv/dt
6
kV/µs
Gate source voltage VGS ± 14 V
Power dissipation
TC = 25 °C
Ptot
35
W