BUZ11
器件描述：N - CHANNEL 50V - 0.03W - 33A TO-220 STripFET] MOSFET
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：80.39KB，共8页
Sponsor by e络盟器件资料摘要：
BUZ11
N - CHANNEL 50V - 0.03Ω - 33A TO-220
STripFET MOSFET
n TYPICAL RDS(on) = 0.03 Ω
n AVALANCHE RUGGED TECHNOLOGY
n 100% AVALANCHE TESTED
n HIGH CURRENT CAPABILITY
n 175
o
C OPERATING TEMPERATURE
APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING
n SOLENOID AND RELAY DRIVERS
n REGULATORS
n DC-DC & DC-AC CONVERTERS
n MOTOR CONTROL, AUDIO AMPLIFIERS
n AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
July 1999
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
=0) 50 V
V
DGR
Drain- gate Voltage (R
GS
=20kΩ)5
GS
Gate-source Voltage ± 20 V
I
D
Drain Current (continuous) at T
c
=25
o
C33A
DM Drain Current (pulsed) 134 A
P
tot
Total Dissipation at T
c
=25
o
C90W
stg
Storage Temperature -65 to 175
o
C
T
j
Max. Operating Junction Temperature 175
o
C
DIN HUMIDITY CATEGORY (DIN 40040) E
IEC CLIMATIC CATEGORY (DIN IEC 68-1) 55/150/56
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
TYPE VDSS RDS(on) ID
BUZ11 50 V < 0.04 Ω 33 A
1/8
N - CHANNEL 50V - 0.03Ω - 33A TO-220
STripFET MOSFET
n TYPICAL RDS(on) = 0.03 Ω
n AVALANCHE RUGGED TECHNOLOGY
n 100% AVALANCHE TESTED
n HIGH CURRENT CAPABILITY
n 175
o
C OPERATING TEMPERATURE
APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING
n SOLENOID AND RELAY DRIVERS
n REGULATORS
n DC-DC & DC-AC CONVERTERS
n MOTOR CONTROL, AUDIO AMPLIFIERS
n AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
July 1999
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
=0) 50 V
V
DGR
Drain- gate Voltage (R
GS
=20kΩ)5
GS
Gate-source Voltage ± 20 V
I
D
Drain Current (continuous) at T
c
=25
o
C33A
DM Drain Current (pulsed) 134 A
P
tot
Total Dissipation at T
c
=25
o
C90W
stg
Storage Temperature -65 to 175
o
C
T
j
Max. Operating Junction Temperature 175
o
C
DIN HUMIDITY CATEGORY (DIN 40040) E
IEC CLIMATIC CATEGORY (DIN IEC 68-1) 55/150/56
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
TYPE VDSS RDS(on) ID
BUZ11 50 V < 0.04 Ω 33 A
1/8