Semiconductor Group
1 05/Sep/1997
BUZ 103SL-4
Preliminary data
SIPMOS
®
Power Transistor
• Quad-channel
• Enhancement mode
• Logic level
• Avalanche-rated
• dv/dt rated
Type V
DS
I
D
R
DS(on)
Package Ordering Code
BUZ 103SL-4 55 V 4.8 A 0.055 Ω P-DSO-28 C67078-S. . . .- . .
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current one channel active
T
A
= 25 °C
I
D
4.8
A
Pulsed drain current one channel active
T
A
= 25 °C
I
Dpuls
19.2
Avalanche energy, single pulse
I
D
= 4.8 A, V
DD
= 25 V, R
GS
= 25 Ω
L = 12 mH, T
j
= 25 °C
E
AS
140
mJ
Reverse diode dv/dt
I
S
= 4.8 A, V
DS
= 40 V, di
F
/dt = 200 A/µs
T
jmax
= 175 °C
dv/dt
6
kV/µs
Gate source voltage V
GS
± 14 V
Power dissipation ,one channel active
T
A
= 25 °C
P
tot
2.4
W
Operating temperature T
j
-55 ... + 175 °C
Storage temperature T
stg
-55 ... + 175
IEC climatic category, DIN IEC 68-1 55 / 175 / 56