Semiconductor Group 1 07/96
BUZ 103
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Low on-resistance
• 175°C operating temperature
• also in TO-220 SMD available
Pin 1 Pin 2 Pin 3
G D S
Type V
DS
I
D
R
DS(on)
Package Ordering Code
BUZ 103 50 V 40 A 0.04 Ω TO-220 AB C67078-S1352-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
C
= 23 °C
I
D
40
A
Pulsed drain current
T
C
= 25 °C
I
Dpuls
160
Avalanche energy, single pulse
I
D
= 40 A, V
DD
= 25 V, R
GS
= 25 Ω
L = 63 µH, T
j
= 25 °C
E
AS
100
mJ
Reverse diode dv/dt
I
S
= 40 A, V
DS
= 40 V, di
F
/dt = 200 A/µs
T
jmax
= 175 °C
dv/dt
6
kV/µs
Gate source voltage V
GS
± 20 V
Power dissipation
T
C
= 25 °C
P
tot
120
W
Operating temperature T
j
-55 ... + 175 °C
Storage temperature T
stg
-55 ... + 175
Thermal resistance, chip case R
thJC
≤ 1.25 K/W
Thermal resistance, chip to ambient R
thJA
≤ 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 175 / 56