Semiconductor Group 1 30/Jan/1998
BUZ 102 S
SPP52N05
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Pin 1 Pin 2 Pin 3
G D S
Type VDS ID RDS(on) Package Ordering Code
BUZ 102 S 55 V 52 A 0.023 Ω TO-220 AB Q67040-S4011-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
37
52
A
Pulsed drain current
TC = 25 °C
IDpuls
208
Avalanche energy, single pulse
ID = 52 A, VDD = 25 V, RGS = 25 Ω
L = 181 µH, Tj = 25 °C
EAS
245
mJ
Avalanche current,limited by Tjmax IAR 52 A
Avalanche energy,periodic limited by Tjmax EAR 12 mJ
Reverse diode dv/dt
IS = 52 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
dv/dt
6
kV/µs
Gate source voltage VGS ± 20 V
Power dissipation
TC = 25 °C
Ptot
120
W