Semiconductor Group 1 04/Nov/1997
Preliminary data
BUZ 101 S
SPP22N05
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
Pin 1 Pin 2 Pin 3
G D S
Type V
DS
I
D
R
DS(on)
Package Ordering Code
BUZ 101 S 55 V 22 A 0.06 Ω TO-220 AB Q67040-S4013-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
I
D
16
22
A
Pulsed drain current
T
C
= 25 °C
I
Dpuls
88
Avalanche energy, single pulse
I
D
= 22 A, V
DD
= 25 V, R
GS
= 25 Ω
L = 372 µH, T
j
= 25 °C
E
AS
90
mJ
Avalanche current,limited by T
jmax
I
AR
22 A
Avalanche energy,periodic limited by T
jmax
E
AR
5.5 mJ
Reverse diode dv/dt
I
S
= 22 A, V
DS
= 40 V, di
F
/dt = 200 A/µs
T
jmax
= 175 °C
dv/dt
6
kV/µs
Gate source voltage V
GS
± 20 V
Power dissipation
T
C
= 25 °C
P
tot
55
W