Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUX87-1100
GENERAL DESCRIPTION
High voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in the
dynamic focus circuit of televisions and monitors.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1100 V
V
CEO
Collector-emitter voltage (open base) - 700 V
I
C
Collector current (DC) - 0.5 A
I
CM
Collector current peak value - 1 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 46 W
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 emitter
2 collector
3 base
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1100 V
V
CEO
Collector-emitter voltage (open base) - 700 V
I
C
Collector current (DC) - 0.5 A
I
CM
Collector current (peak value) t
p
= 2 ms - 1 A
I
B
Base current (DC) - 0.2 A
I
BM
Base current (peak value) - 0.3 A
-I
BM
Reverse base current (peak value)
1
- 0.3 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 46 W
T
stg
Storage temperature -40 150 ˚C
T
j
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
Junction to mounting base - 2.7 K/W
R
th j-a
Junction to ambient in free air 60 - K/W
123
tab
b
c
e
1 Turn-off current.
November 1999 1 Rev 1.000