Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUX86P
BUX87P
GENERAL DESCRIPTION
High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
BUX 86P 87P
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 800 1000 V
V
CEO
Collector-emitter voltage (open base) - 400 450 V
V
CESAT
Collector-emitter saturation voltage I
C
= 0.2 A; I
B
= 20 mA - 1 V
I
C
Collector current (DC) - 0.5 A
I
CM
Collector current peak value - 1 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 42 W
t
f
Fall time I
C
= 0.2 A; I
B(on)
= 20 mA 0.28 - µs
PINNING - SOT82 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 emitter
2 collector
3 base
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BUX 86P 87P
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 800 1000 V
V
CEO
Collector-emitter voltage (open base) - 400 450 V
V
EBO
Emitter-base voltage (open collector) - 5 V
I
C
Collector current (DC) - 0.5 A
I
CM
Collector current (peak value) t
p
= 2 ms - 1 A
I
B
Base current (DC) - 0.2 A
I
BM
Base current (peak value) - 0.3 A
-I
BM
Reverse base current (peak value)
1
- 0.3 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 42 W
T
stg
Storage temperature -40 150 ˚C
T
j
Junction temperature - 150 ˚C
1 23
b
c
e
1 Turn-off current.
November 1995 1 Rev 1.100