Philips Semiconductors Product specification
NPN high voltage BUX84S
Power transistor
FEATURES SYMBOL QUICK REFERENCE DATA
• Fast switching V
CESM
= 800 V
• Excellent thermal stability
• High thermal cycling performance V
CEO
= 400 V
• Low thermal resistance
• Surface mounting package I
C
= 2 A
V
CE(SAT)
≤ 1 V (I
C
= 1 A)
t
f
= 0.4 µs (typ)
GENERAL DESCRIPTION PINNING SOT428
High voltage, high speed glass PIN DESCRIPTION
passivated NPN power transistor in
a plastic package. 1 base
Applications:- 2 collector
1
Off-line SMPS
TV and monitor power supplies 3 emitter
Inverters
Electronic lighting ballasts 4 collector (tab)
The BUX84S is supplied in the
SOT428 (DPAK) surface mounting
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector-emitter voltage V
BE
= 0 V - 800 V
(peak value)
V
CEO
Collector-emitter voltage base open circuit - 400 V
(DC)
V
EBO
Emitter-base voltage collector open circuit - 5 V
I
C
Collector current (DC) - 2 A
I
CM
Collector current (peak t
p
= 2 ms - 3 A
value)
I
B
Base current (DC) - 0.75 A
I
BM
Base current (peak value) - 1 A
-I
BM
Reverse base current (peak - 1 A
value during turn-off)
P
tot
Total power dissipation T
mb
= 25 ˚C - 50 W
T
j
, T
stg
Operating junction and - 65 150 ˚C
storage temperature
b
c
e
1
2
3
tab
1 It is not possible to make connection to pin:2 of the SOT428 package.
February 1999 1 Rev 1.000