BUX84
NPN SILICON POWER TRANSISTOR
PRODUCT INFORMATION
1
AUGUST 1978 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, U K
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
a71 40 W at 25°C Case Temperature
a71 2 A Continuous Collector Current
a71 3 A Peak Collector Current
a71 Typical tf = 200 ns at 25°C B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0) VCBO 800 V
Collector-emitter voltage (VBE = 0) VCES 800 V
Collector-emitter voltage (IB = 0) VCEO 400 V
Continuous collector current IC 2 A
Peak collector current (see Note 1) ICM 3 A
Continuous device dissipation at (or below) 25°C case temperature Ptot 40 W
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C