BUX82
Prelim.9/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
V
CESM
Collector – Emitter Voltage V
BE
= 0
V
CER
Collector – Emitter Voltage R
BE
= 100G57
V
CEO
Collector – Emitter Voltage(open base)
I
C
Collector Current (d.c)
I
CM
Peak Collector Current t
p
= 2ms
I
B
Base Current (d.c)
P
tot
Total Power Dissipation T
mb
= 50°C
T
STG
Storage Temperature Range
T
J
Maximum Junction Temperature
800V
500V
400V
6A
8A
2A
60W
-65 to +150°C
+150°C
MECHANICAL DATA
Dimensions in mm (inches)
12
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.
61 (
1
.
52)
39.
12 (
1
.
54)
29.
9 (
1
.
177)
30.
4 (
1
.
197)
16.
64 (
0
.
655)
17.
15 (
0
.
675)
3.84 (0.151)
4.09 (0.161)
0.
97 (
0
.
060)
1.
10 (
0
.
043)
7.92 (0.312)
12.70 (0.50)
22.
23
(
0
.
875)
ma
x
.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
HIGH CURRENT
HIGH SPEED
HIGH POWER
SILICON NPN PLANAR
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (T
j
= 25°C unless otherwise stated)
TO–204AA (TO–3)
PIN 1 — Base PIN 2 — Emitter Case is Collector.
Applications
The BUX82 is an epitaxial silicon NPN planar
transistor that has high current and high power
handling capability and high switching speed.
This device is especially suitable for
switching–control amplifiers, power gates, switch-
ing regulators, power-switching circuits convert-
ers, inverters and control circuits.Other recom-
mended applications include DC–RF amplifiers
and power oscillators.