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BUV61

器件描述:HIGH POWER NPN SILICON TRANSISTOR
器件厂商:STMICROELECTRONICS [STMicroelectronics]
厂商主页:http://www.st.com/
文件大小:48.7KB,共5页
Sponsor by e络盟
器件资料摘要:
BUV61

HIGH POWER NPN SILICON TRANSISTOR
a73 NPN TRANSISTOR
a73 HIGH CURRENT CAPABILITY
a73 FAST SWITCHING SPEED
a73 FULLY CHARACTERIZED AT 125
o
C
APPLICATION
a73 SWITCHING REGULATORS
a73 MOTOR CONTROL
DESCRIPTION
The BUV61 is a Multi-Epitaxial planar NPN
transistor in TO-3 metal case.
It is intented for use in high frequency and
efficiency converters such us motor controllers
and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
October 2003
1
2
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CEV
Collector-emitter Voltage (V
BE
= -1.5V) 300 V
V
CEO
Collector-emitter Voltage (I
B
= 0) 200 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 7 V
I
C
Collector Current 50 A
I
CM
Collector Peak Current 75 A
I
B
Base Current 8 A
I
BM
Base Peak Current 15 A
P
Base
Reverse Bias Base Dissipation
(B.E. junction in avalanche)
2W
tot
Total Power Dissipation at T
case
< 25
o
C 250 W
T
stg
Storage Temperature -65 to 200
o
C
T
j
Max Operating Junction Temperature 200
o
C
TO-3
(version " S ")
®
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