BUV48
器件描述:NPN SILICON POWER TRANSISTORS
文件大小:189.95KB,共8页
Sponsor by e络盟
器件资料摘要:
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
1
AUGUST 1978 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, U K
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
a71 Rugged Triple-Diffused Planar Construction
a71 15 A Continuous Collector Current
a71 1000 Volt Blocking Capability
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.
RATING SYMBOL VALUE UNIT
Collector-emitter voltage (VBE = 0 V) BUV48BUV48A VCES 8501000 V
Collector-emitter voltage (RBE = 10 Ω) BUV48BUV48A VCER 8501000 V
Collector-emitter voltage (IB = 0) BUV48BUV48A VCEO 400450 V
Continuous collector current IC 15 A
Peak collector current (see Note 1) ICM 30 A
Continuous base current IB 4 A
Peak base current IBM 20 A
Non repetitive accidental peak surge current ICSM 55 A
Continuous device dissipation at (or below) 25°C case temperature Ptot 125 W
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C