BUV20
HIGH CURRENT NPN SILICON TRANSISTOR
a73 STMicroelectronics PREFERRED
SALESTYPE
a73 NPN TRANSISTOR
a73 HIGH CURRENT CAPABILITY
a73 FAST SWITCHING SPEED
a73 HIGH RUGGEDNESS
APPLICATIONS
a73 LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
a73 SWITCHING REGULATORS
DESCRIPTION
The BUV20 is silicon Multiepitaxial Planar NPN
transistor mounted in jedec TO-3 metal case. It is
intended for use in switching and linear
applications in military and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
January 2000
1
2
TO-3
(version "S")
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (I
E
= 0) 160 V
V
CER Collector-Emitter Voltage (RBE = 100Ω)
150 V
VCEX Collector-Emitter Voltage (VBE = -1.5V) 160 V
VCEO Collector-Emitter Voltage (IB = 0) 125 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
I
C
Collector Current 50 A
I
CM
Collector Peak Current 60 A
I
B
Base Current 10 A
P
tot Total Power Dissipation at Tcase ≤ 25
o
C 250 W
Tstg Storage Temperature -65 to 200
o
C
T
j
Junction Temperature 200
o
C
®
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