BUT34
器件描述:50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS
文件大小:287.56KB,共8页
Sponsor by e络盟
器件资料摘要:
1
Motorola Bipolar Power Transistor Device Data
C0068C0101C0115C0105C0103C0110C0101C0114C0039C0115 C0068C0097C0116C0097 C0083C0104C0101C0101C0116
C0083C0087C0073C0084C0067C0072C0077C0079C0068C0069 C0083C0101C0114C0105C0101C0115
C0078C0080C0078 C0083C0105C0108C0105C0099C0111C0110 C0080C0111C0119C0101C0114 C0068C0097C0114C0108C0105C0110C0103C0116C0111C0110
C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115 C0119C0105C0116C0104 C0066C0097C0115C0101C0045C0069C0109C0105C0116C0116C0101C0114
C0083C0112C0101C0101C0100C0117C0112 C0068C0105C0111C0100C0101
The BUT34 Darlington transistor is designed for high–voltage, high–speed, power
switching in inductive circuits where fall time is critical. They are particularly suited for
line–operated SWITCHMODE applications such as:
• AC and DC Motor Controls
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Fast Turn–Off Times
0.7 µs Inductive Fall Time at 25C0095C (Typ)
1.8 µs Inductive Storage Time at 25C0095C (Typ)
• Operating Temperature Range –65 to 200C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
BUT34
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎÎÎ
V
CEO(sus)
ÎÎÎÎÎÎÎÎ
500
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎÎÎ
V
CEV
ÎÎÎÎÎÎÎÎ
850
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎÎÎ
V
EB
ÎÎÎÎÎÎÎÎ
10
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
Collector Current — Peak (1)
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
I
C
I
CM
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
50
75
ÎÎÎÎ
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current — Continuous
Base Current — Peak (1)
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
I
B
I
BM
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
10
15
ÎÎÎÎ
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Free Wheel Diode Forward Current — Continuous
Free Wheel Diode Forward Current — Peak
ÎÎÎÎÎÎÎ
I
F
I
FM
ÎÎÎÎÎÎÎÎ
50
75
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ T
C
= 25C0095C
@ T
C
= 100C0095C
Derate above 25C0095C
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
P
D
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
250
140
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Watts
W/C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎ
T
J
, T
stg
ÎÎÎÎÎÎÎÎ
–65 to +200
ÎÎÎÎ
C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎ
R
θJC
ÎÎÎÎÎÎÎÎ
0.7
ÎÎÎÎ
C0095C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Lead Temperature for Soldering Purpose:
1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
T
L
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
275
ÎÎÎÎ
ÎÎÎÎ
C0095C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle C012010%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUT34/D
Motorola, Inc. 1995
C0066C0085C0084C0051C0052
50 AMPERES
NPN SILICON
POWER DARLINGTON
TRANSISTOR
850 VOLTS
250 WATTS
CASE 197A–05
TO–204AE
(TO–3)
≈n636861720000000000000000 50 ≈n636861720000000000000000 8
REV 7