Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT211X
GENERAL DESCRIPTION
Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope
specially suited for high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 850 V
V
CEO
Collector-emitter voltage (open base) - 400 V
I
C
Collector current (DC) - 5 A
I
CM
Collector current peak value - 10 A
P
tot
Total power dissipation T
hs
≤ 25 ˚C - 32 W
V
CEsat
Collector-emitter saturation voltage I
C
= 3.0 A; I
B
= 0.4 A - 2.0 V
t
f
Inductive fall time I
Con
= 3.0 A; I
Bon
= 0.3 A - 0.1 µs
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 850 V
V
CEO
Collector-emitter voltage (open base) - 400 V
I
C
Collector current (DC) - 5 A
I
CM
Collector current peak value - 10 A
I
B
Base current (DC) - 2 A
I
BM
Base current peak value - 4 A
P
tot
Total power dissipation T
hs
≤ 25 ˚C - 32 W
T
stg
Storage temperature -65 150 ˚C
T
j
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
Junction to heat sink - 3.95 K/W
R
th j-a
Junction to ambient in free air - 55 K/W
123
case
b
c
e
March 1996 1 Rev 1.000