Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT12XI
GENERAL DESCRIPTION
Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially
suited for overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,
motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1000 V
V
CEO
Collector-emitter voltage (open base) - 450 V
I
C
Collector current (DC) - 8 A
I
CM
Collector current peak value - 20 A
P
tot
Total power dissipation T
hs
≤ 25 ˚C - 33 W
V
CEsat
Collector-emitter saturation voltage I
C
= 5.0 A;I
B
= 0.86 A - 1.5 V
I
Csat
Collector saturation current 5 - A
t
f
Inductive fall time I
Con
= 5.0A;I
Bon
= 1.0A,T
j
≤100˚C - 300 ns
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1000 V
V
CEO
Collector-emitter voltage (open base) - 450 V
I
C
Collector current (DC) - 8 A
I
CM
Collector current peak value - 20 A
I
B
Base current (DC) - 4 A
I
BM
Base current peak value - 6 A
P
tot
Total power dissipation T
hs
≤ 25 ˚C - 33 W
T
stg
Storage temperature -65 150 ˚C
T
j
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
Junction to heatsink with heatsink compound - 3.65 K/W
R
th j-a
Junction to ambient in free air 55 - K/W
123
case
b
c
e
June 1997 1 Rev 1.000