©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001
BUT12/
12A
NPN Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulsed Test: PW = 300µs, duty cycle = 1.5%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BUT12
: BUT12A
850
1000
V
V
V
CEO
Collector-Emitter Voltage
: BUT12
: BUT12A
400
450
V
V
I
C
Collector Current (DC) 8 A
I
CP
*Collector Current (Pulse) 20 A
I
B
Base Current 4 A
P
C
Collector Dissipation (T
C
=25°C) 100 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 175 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage I
C
= 100mA, L = 25mH 400 V
I
CES
Collector Cut-off Current V
CE
= V
CES
, V
BE
= 0 1 mA
I
EBO
Emitter Cut-off Current V
BE
= 9V, I
C
= 0 10 mA
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 6A, I
B
= 1.2A 1.5 V

V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= 6A, I
B
= 1.2A 1.5 V
t
ON
Turn On Time V
CC
= 250V, I
C
=

6A
I
B1
= - I
B2
= 1.2A
R
L
= 41.6Ω
1 µs
t
STG
Storage Time 4 µs

t
F
Fall Time 0.8 µs
BUT12/12A
High Voltage Power Switching Applications
1.Base 2.Collector 3.Emitter
1
TO-220