©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001
BUT11F/11
A
F
NPN Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
Thermal Characteristics T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BUT11F
: BUT11AF
850
1000
V
V
V
CEO
Collector-Emitter Voltage
: BUT11F
: BUT11AF
400
450
V
V
V
EBO
Emitter-Base Voltage 9 V
I
C
Collector Current (DC) 5 A
I
CP
*Collector Current (Pulse) 10 A
I
B
Base Current (DC) 2 A
I
BP
*Base Current (Pulse) 4 A
P
C
Collector Dissipation (T
C
=25°C) 40 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: BUT11F
: BUT11A F

I
C
= 100mA, I
B
= 0 400
450
V
V
I
CES
Collector Cut-off Current
: BUT11F
: BUT11AF
V
CE
= 850V, V
BE
= 0
V
CE
= 1000V, V
BE
= 0

1
1
mA
mA
I
EBO
Emitter Cut-off Current V
BE
= 9V, I
C
= 0 10 mA
V
CE
(sat) Collector-Emitter Saturation Voltage
: BUT11F
: BUT11AF

I
C
= 3A, I
B
= 0.6A
I
C
= 2.5A, I
B
= 0.5A
1.5
1.5
V
V

V
BE
(sat) Base-Emitter Saturation Voltage
: BUT11F
: BUT11AF
I
C
= 3A, I
B
= 0.6A
I
C
= 2.5A, I
B
= 0.5A
1.3
1.3
V
V
t
ON
Turn On Time V
CC
= 250V, I
C
= 2.5A
I
B1
= -I
B2
= 0.5A
R
L
= 100Ω
1 µs
t
STG
Storage Time 4 µs

t
F
Fall Time 0.8 µs
Symbol Parameter Typ Max Units
R
θjC
Thermal Resistance, Junction to Case 3.125 °C/W
BUT11F/11AF
High Voltage Power Switching Applications
1
1.Base 2.Collector 3.Emitter
TO-220F