Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11AF
GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated
mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1000 V
V
CEO
Collector-emitter voltage (open base) - 450 V
I
C
Collector current (DC) - 5 A
I
CM
Collector current peak value - 10 A
P
tot
Total power dissipation T
hs
≤ 25 ˚C - 20 W
V
CEsat
Collector-emitter saturation voltage - 1.5 V
I
Csat
Collector saturation current 2.5 - A
t
f
Fall time 800 - ns
[INCLUDE]
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1000 V
V
CEO
Collector-emitter voltage (open base) - 450 V
I
C
Collector current (DC) - 5 A
I
CM
Collector current peak value - 10 A
I
B
Base current (DC) - 2 A
I
BM
Base current peak value - 4 A
P
tot
Total power dissipation T
hs
≤ 25 ˚C - 20 W
T
stg
Storage temperature -65 150 ˚C
T
j
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
Junction to heatsink with heatsink compound - 3.95 K/W
R
th j-a
Junction to ambient in free air 55 - K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz - 12 - pF
heatsink
August 1997 1 Rev 1.000