GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
metal envelope ,primarily for use in switching power
circuits.
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0V 1000 V
V
CEO
Collector-emitter voltage (open base) 450 V
I
C
Collector current (DC) 5 A
I
CM
Collector current peak value 10 A
P
tot
Total power dissipation T
mb
25 40 W
V
CEsat
Collector-emitter saturation voltage I
C
= 2.5A; I
B
= 0.5A 1.5 V
I
csat
Collector saturation current f = 16KHz A
V
F
Diode forward voltage V
t
f
Fall time I
C
=2.5A,I
B1
=-I
B2
=0.5A,V
CC
=150V 1.0 s
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0V 1000 V
V
CEO
Collector-emitter voltage (open base) 450 V
V
EBO
Emitter-base voltage(open collector) 5 V
I
C
Collector current (DC) 5 A
I
B
Base current (DC) 2 A
I
BM
Base current peak value 4 A
P
tot
Total power dissipation Tmb 25 40 W
T
stg
Storage temperature -55 150
T
j
Junction temperature 150
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
I
CE
Collector-emitter cut-off current V
BE
= 0V; V
CE
= V
CESMmax
1.0 mA
I
CES
V
BE
= 0V; V
CE
= V
CESMmax
2.0 mA
T
j
= 125
V
CEOsust
Collector-emitter sustaining voltage I
B
= 0A; I
C
= 100mA V
L = 25mH
V
CEsat
Collector-emitter saturation voltages I
C
= 2.5A; I
B
= 0.5A 1.5 V
V
BEsat
Base-emitter satuation voltage I
C
= 2.5A; I
B
= 0.5A 1.5 V
h
FE
DC current gain I
C
= 0.5A; V
CE
= 5V 10 50
V
F
Diode forward voltage V
f
T
Transition frequency at f = 1MHz I
C
= 0.1A; V
CE
= 10V 5 MHz
C
c
Collector capacitance at f = 1MHz V
CB
= 10V pF
t
s
Switching times(16KHz line deflecton circuit)
I
C
=2.5A,I
B1
=-I
B2
=0.5A,V
CC
=150V 5.0 s
t
f
Turn-off storage time Turn-off fall time I
C
=2.5A,I
B1
=-I
B2
=0.5A,V
CC
=150V
1.0 s
ELECTRICAL CHARACTERISTICS
TO-220F
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com