BUT100
HIGH POWER NPN SILICON TRANSISTOR
a73 SGS-THOMSON PREFERRED SALESTYPE
a73 NPN TRANSISTOR
a73 HIGH CURRENT CAPABILITY
a73 FAST SWITCHING SPEED
a73 HIGH RUGGEDNESS
APPLICATION
a73 MOTOR CONTROL
a73 UNINTERRUPTABLE POWER SUPPLY
DESCRIPTION
The BUT100 is a Multiepitaxial Planar NPN
Transistor in TO-3 package. It is intended for use
in high frequency and efficency converters,
switching regulators and motor control.
INTERNAL SCHEMATIC DIAGRAM
April 1997
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ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCEV Collector-Emitter Voltage (VBE = -1.5V) 200 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 125 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 7 V
I
E
Emitter Current 50 A
I
EM
Emitter Peak Current 150 A
I
B
Base Current 10 A
IBM Base Peak Current 30 A
P
tot
Total Dissipation at T
c
< 25
o
C 300 W
T
stg
Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
TO-3
(version " S ")
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