BUS50
器件描述:70 AMPERES NPN SILICON POWER TRANSISTOR 125 VOLTS (BVCEO) 350 WATTS 200 V (BVCES)
文件大小:115.55KB,共4页
Sponsor by e络盟
器件资料摘要:
1
Motorola Bipolar Power Transistor Device Data
C0083C0087C0073C0084C0067C0072C0077C0079C0068C0069 C0083C0101C0114C0105C0101C0115
C0078C0080C0078 C0083C0105C0108C0105C0099C0111C0110 C0080C0111C0119C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
The BUS50 transistor is designed for low voltage, high–speed, power switching in
inductive circuits where fall time is critical. It is particularly suited for battery
switchmode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
Fast Turn–Off Times
300 ns Inductive Fall Time –25C0095C (Typ)
Operating Temperature Range –65 to +200C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
BUS50
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎÎÎ
V
CEO(sus)
ÎÎÎÎÎÎÎÎ
125
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎÎÎ
V
CEV
ÎÎÎÎÎÎÎÎ
200
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Base Voltage
ÎÎÎÎÎÎÎ
V
EB
ÎÎÎÎÎÎÎÎ
7
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
— Peak (1)
— Overload
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
I
C
I
CM
I
oI
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
70
140
ÎÎÎÎ
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current — Continuous
— Peak (1)
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
I
B
I
BM
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
20
ÎÎÎÎ
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation — T
C
= 25°C
— T
C
= 100°C
Derate above 25C0095C
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
P
D
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
350
200
2 ÎÎÎÎ
ÎÎÎÎ
Watts
W/C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
T
J
, T
stg
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
–65 to +200
ÎÎÎÎ
ÎÎÎÎ
C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎ
R
θJC
ÎÎÎÎÎÎÎÎ
0.5
ÎÎÎÎ
C0095C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Lead Temperature
for Soldering Purposes:
1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
T
L
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
275
ÎÎÎÎ
ÎÎÎÎ
C0095C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle C012010%.
SWITCHMODE is a trademark of Motorola, Inc.
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUS50/D
Motorola, Inc. 1995
C0066C0085C0083C0053C0048
70 AMPERES
NPN SILICON
POWER TRANSISTOR
125 VOLTS (BVCEO)
350 WATTS
200 V (BVCES)
CASE 197A–05
TO–204AE
REV 7