BUK202-50
器件描述:PowerMOS transistor TOPFET high side switch
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器件资料摘要:
Philips Semiconductors Product specification
PowerMOS transistor BUK202-50Y
TOPFET high side switch
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MIN. UNIT
overload protected power switch
based on MOSFET technology in a I
L
Nominal load current (ISO) 9 A
5 pin plastic envelope, configured
as a single high side switch.
SYMBOL PARAMETER MAX. UNIT
APPLICATIONS
V
BG
Continuous off-state supply voltage 50 V
General controller for driving I
L
Continuous load current 20 A
lamps, motors, solenoids, heaters. T
j
Continuous junction temperature 150 ˚C
R
ON
On-state resistance 38 mΩ
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS switch
Low on-state resistance
5 V logic compatible input
Overtemperature protection -
self resets with hysteresis
Overload protection against
short circuit load with
output current limiting;
latched - reset by input
High supply voltage load
protection
Supply undervoltage lock out
Status indication for overload
protection activated
Diagnostic status indication
of open circuit load
Very low quiescent current
Voltage clamping for turn off of
inductive loads
ESD protection on all pins
Reverse battery and
overvoltage protection Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT263 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 Ground
2 Input
3 Battery (+ve supply)
4 Status
5 Load
Fig. 2. Fig. 3.
tab connected to pin 3
BATT
LOAD
INPUT
GROUND
STATUS
POWER
MOSFET
RG
CONTROL &
PROTECTION
CIRCUITS
12345
263-01
leadform
tab
B
G
L
I
S
HSS
TOPFET
April 1995 1 Rev 1.100