Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1506DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1500 V
V
CEO
Collector-emitter voltage (open base) - 700 V
I
C
Collector current (DC) - 5 A
I
CM
Collector current peak value - 8 A
P
tot
Total power dissipation T
hs
≤ 25 ˚C - 32 W
V
CEsat
Collector-emitter saturation voltage I
C
= 3.0 A; I
B
= 0.79 A - 5.0 V
I
Csat
Collector saturation current 3.0 - A
V
F
Diode forward voltage I
F
= 3.0 A 1.6 2.0 V
t
f
Fall time I
CM
= 3.0 A; I
B(end)
= 0.67 A 0.25 0.5 µs
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1500 V
V
CEO
Collector-emitter voltage (open base) - 700 V
I
C
Collector current (DC) - 5 A
I
CM
Collector current peak value - 8 A
I
B
Base current (DC) - 3 A
I
BM
Base current peak value - 8 A
-I
B(AV)
Reverse base current average over any 20 ms period - 100 mA
-I
BM
Reverse base current peak value
1
-8A
P
tot
Total power dissipation T
hs
≤ 25 ˚C - 32 W
T
stg
Storage temperature -40 150 ˚C
T
j
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
Junction to heatsink with heatsink compound - 4.0 K/W
R
th j-a
Junction to ambient in free air 55 - K/W
123
case
b
c
e
Rbe
1 Turn-off current.
September 1997 1 Rev 1.300