Symbol
V
DS
V
GS
I
DM
I
AV
E
AV
T
J
, T
STG
Symbol Typ Max
23 40
48 65
R
θJL
12 16Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±12
Pulsed Drain Current
B
Power Dissipation
T
A
=25°C
Gate-Source Voltage
Drain-Source Voltage
A
Maximum Junction-to-Ambient
A
Steady-State
11.5
9.6
80
Avalanche Current
B,E
25
Repetitive Avalanche Energy
B,E
L=0.1mH 78
I
D
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
30
mJ
W
Junction and Storage Temperature Range
A
P
D
°C
3
2.1
-55 to 150
T
A
=70°C
AO4406
N-Channel Enhancement Mode Field Effect Transistor
March 2002
Features
V
DS
(V) = 30V
I
D
= 11.5A
R
DS(ON)
< 14mΩ (V
GS
= 10V)
R
DS(ON)
< 16.5mΩ (V
GS
= 4.5V)
R
DS(ON)
< 26mΩ (V
GS
= 2.5V)
General Description
The AO4406 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device makes an excellent high side switch for
notebook CPU core DC-DC conversion.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
Alpha & Omega Semiconductor, Ltd.