2N6786
N-Channel MOSFET.
V
DSS
= 400V
I
D
= 1.25A
R
DS(ON)
= 3.6Ω

All Semelab hermetically sealed products can be
processed in accordance with the requirements
of BS, CECC and JAN, JANTX, JANTXV and
JANS specifications.
Parameter Min. Typ. Max. Units
V
DSS
Drain – Source Breakdown Voltage 400 V
I
D
Continuous Drain Current 1.25 A
P
D
Power Dissipation 15 W
R
DS(ON)
Static Drain – Source On–State Resistance 3.6 Ω
C
ISS
Input Capacitance 170 pF
Q
g
Total Gate Charge 8.4 nC
t
td(on)
Turn–On Delay Time 15 ns
t
tr
Rise Time 20 ns
t
td(off)
Turn–Off Delay Time 35 ns
t
f
Fall Time 30 ns
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
11-Oct-02
TO39 (TO205AF)
PINOUTS
1 – Source 2 – Gate 3 - Drain
N-Channel MOSFET
in a
Hermetically sealed TO39
Metal Package.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Dimensions in mm (inches).

0.89
(0.035)
max.
12.70
(0.500)
min.
4.06 (0.16)
4.57 (0.18)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
0.41 (0.016)
0.53 (0.021)
dia.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2.54
(0.100)
5.08 (0.200)
typ.
45°
1
2
3