PRODUCT INFORMATION
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12627.11 1998-02-04
750nm
850nm
1A354
High-Performance PIN
Datacom, General Purpose
0.6
14
Ø1.5
Ø4.7
3.7
0.4
5.4
2.5
CATHODE
CASEANODE
BOTTOM VIEW
The diode chip is isolated from the case.
TO-46 Package With Lens
All dimensions in mm
The very high speed and low capaci-
tance of this GaAs PIN Photodiode
makes it ideal for datacom and general
purpose applications. Its double-lens
optical system is designed for single-
mode fiber as well as for multimode
fiber with core diameter up to
62.5µm. And a reverse voltage of only
5 Volts makes interfacing to a pream-
plifier easy.
Optical and Electrical Characteristics (25°C Case Temperature)
Absolute Maximum Ratings
Thermal Characteristics
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Temperature Coefficient-Dark Current dI
d
/dT
j
5%/8C
PARAMETER SYMBOL LIMIT
Storage Temperature T
stg
-55 to +1258C
Operating Temperature T
op
-55 to +1258C
Reverse Voltage V
R
30V
Soldering Temperature(2mm from the case for 10 sec) T
sld
2608C
Operating Conditions: V
R
=5V. Fiber: Single-mode to multimode 62.5/125µm.
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION
Responsivity R 0.35 0.45 A/W l=850nm
(Fig.1&2)(Table1)
Bandwidth f
c
1 GHz R
L
=50V
Capacitance (Fig. 4) C 1 2 pF f=1MHz
Dark Current I
d
0.4 1 nA