1951A
器件描述：Medium Power Microwave MESFET
器件厂商：MITSUBISHI [Mitsubishi Electric Semiconductor]
文件大小：28.87KB，共4页
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MITSUBISHI SEMICONDUTOR
MGF19511AA
Medium Power Microwave MESFET
MITSUBISHI
1 Aug 2002
(1/4)
PRELIMINARY
DESCRIPTION
The MGF1951A is a 20mW MESFET for S- to Ku-band
driver amplifiers and oscillators.
Its lead-less ceramic package assures minimum parasitics.
FEATURES
• High Gain and High Output Power
G
LP
=9dB, P
1dB
=13dBm (typ) @ f=12GHz
• Leadless Ceramic Package
APPLICATION
S- to Ku-Band Driver Amplifiers and Oscillators
QUALITY
General Grade
ORDERING INFORMATION
Part Number Quantity Supply Form
MGF1951A-01 3.000 pcs/reel Tape & Reel
ABSOLUTE MAXIMUM RATINGS (T
a
=+25°C)
Symbol Parameter Rating Unit
V
GDO
Gate to Drain Voltage -8 V
V
GSO
Gate to Source Voltage -8 V
I
D
Drain Current 120 mA
P
T
Total Power Dissipation 300 mW
T
ch
Channel Temperature 125 °C
T
stg
Storage Temperature -65 to +125 °C
ELECTRICAL CHARACTERISTICS (T
a
=+25°C)
Symbol Parameter Test Conditions MIN TYP MAX Unit
V
(BR)GDO
Gate to Drain Breakdown Voltage I
G
=-30µA -8 -15 — V
I
DSS
Saturated Drain Current V
DS
=3V, V
GS
=0V 35 60 120 mA
V
GS(off)
Gate to Source Cut-off Voltage V
DS
=3V, I
D
=300µA -0.3 -1.4 -3.5 V
P
1dB
Output Power at
1dB Gain Compression
V
DS
=3V, I
D
=30mA, f=12GHz 11 13 — dBm
G
LP
Linear Power Gain
V
DS
=3V, I
D
=30mA, P
in
=-5dBm,
f=12GHz
79—dB
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the
maximum effort into making semiconductor
products better and more reliable, but there is
always the possibility that trouble may occur
with them. Trouble with semiconductors may
lead to personal injury, fire or property
damage. Remember to give due
consideration to safety when making your
circuit designs, with appropriate measure
such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or
(iii) prevention against any malfunction or
mishap.
MGF19511AA
Medium Power Microwave MESFET
MITSUBISHI
1 Aug 2002
(1/4)
PRELIMINARY
DESCRIPTION
The MGF1951A is a 20mW MESFET for S- to Ku-band
driver amplifiers and oscillators.
Its lead-less ceramic package assures minimum parasitics.
FEATURES
• High Gain and High Output Power
G
LP
=9dB, P
1dB
=13dBm (typ) @ f=12GHz
• Leadless Ceramic Package
APPLICATION
S- to Ku-Band Driver Amplifiers and Oscillators
QUALITY
General Grade
ORDERING INFORMATION
Part Number Quantity Supply Form
MGF1951A-01 3.000 pcs/reel Tape & Reel
ABSOLUTE MAXIMUM RATINGS (T
a
=+25°C)
Symbol Parameter Rating Unit
V
GDO
Gate to Drain Voltage -8 V
V
GSO
Gate to Source Voltage -8 V
I
D
Drain Current 120 mA
P
T
Total Power Dissipation 300 mW
T
ch
Channel Temperature 125 °C
T
stg
Storage Temperature -65 to +125 °C
ELECTRICAL CHARACTERISTICS (T
a
=+25°C)
Symbol Parameter Test Conditions MIN TYP MAX Unit
V
(BR)GDO
Gate to Drain Breakdown Voltage I
G
=-30µA -8 -15 — V
I
DSS
Saturated Drain Current V
DS
=3V, V
GS
=0V 35 60 120 mA
V
GS(off)
Gate to Source Cut-off Voltage V
DS
=3V, I
D
=300µA -0.3 -1.4 -3.5 V
P
1dB
Output Power at
1dB Gain Compression
V
DS
=3V, I
D
=30mA, f=12GHz 11 13 — dBm
G
LP
Linear Power Gain
V
DS
=3V, I
D
=30mA, P
in
=-5dBm,
f=12GHz
79—dB
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the
maximum effort into making semiconductor
products better and more reliable, but there is
always the possibility that trouble may occur
with them. Trouble with semiconductors may
lead to personal injury, fire or property
damage. Remember to give due
consideration to safety when making your
circuit designs, with appropriate measure
such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or
(iii) prevention against any malfunction or
mishap.