BUR51
HIGH CURRENT NPN SILICON TRANSISTOR
a73 SGS-THOMSON PREFERRED SALESTYPE
a73 NPN TRANSISTOR
DESCRIPTION
The BUR51 is a silicon multiepitaxial planar NPN
transistor in modified Jedec TO-3 metal case,
intented for use in switching and linear
applications in military and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
June 1997
1
2
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 300 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 200 V
VEBO Emitter-Base Voltage (IC = 0) 10 V
I
C
Collector Current 60 A
I
CM
Collector Peak Current (t
p
= 10 ms) 80 A
I
B
Base Current 16 A
P
tot
Total Dissipation at T
c
≤ 25
o
C 350 W
Tstg Storage Temperature -65 to 200
o
C
Tj Max. Operating Junction Temperature 200
o
C
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