BUPD1520
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
PRODUCT INFORMATION
1
MAY 1999 - REVISED SEPTEMBER 1999Copyright © 1999, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
l Designed for Self Oscillating Inverter
Applications
l Rugged 1500 V Planar Construction
l Integral Free-Wheeling Anti-Parallel Diode
device symbol
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
B
C
E

NOTE 1: This value applies for tp = 10 ms, duty cycle ≤ 2%.

absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
Collector-emitter voltage (IB = 0) VCEO 700 V
Collector-emitter voltage (VBE = 0) VCES 1500 V
Emitter-base voltage (IC = 0) VEBO 11 V
Continuous collector current IC 2 A
Peak collector current (see Note 1) ICM 2.5 A
Continuous base current IB 2 A
Peak base current (see Note 1) IBM 2.5 A
Continuous device dissipation at (or below) 25°C case temperature Ptot 50 W
Operating junction temperature range Tj -55 to +125 °C
Storage temperature range Tstg -55 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL 300 °C