Semiconductor Group 1 Jul-31-1996
BUP 410
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1 Pin 2 Pin 3
G C E
Type V
CE
I
C
Package Ordering Code
BUP 410 600V 13A TO-220 AB C67040-A4424-A2
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE
600 V
Collector-gate voltage
R
GE
= 20 kΩ
V
CGR
600
Gate-emitter voltage V
GE
± 20
DC collector current
T
C
= 25 °C
T
C
= 90 °C
I
C
8
13
A
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
T
C
= 90 °C
I
Cpuls
16
26
Avalanche energy, single pulse
I
C
= 6 A, V
CC
= 50 V, R
GE
= 25 Ω
L = 500 µH, T
j
= 25 °C
E
AS
9
mJ
Power dissipation
T
C
= 25 °C
P
tot
50
W
Chip or operating temperature T
j
-55 ... + 150 °C
Storage temperature T
stg
-55 ... + 150