Semiconductor Group 1 Jul-30-1996
BUP 313
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1 Pin 2 Pin 3
G C E
Type V
CE
I
C
Package Ordering Code
BUP 313 1200V 32A TO-218 AB Q67040-A4208-A2
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE
1200 V
Collector-gate voltage
R
GE
= 20 kΩ
V
CGR
1200
Gate-emitter voltage V
GE
± 20
DC collector current
T
C
= 25 °C
T
C
= 90 °C
I
C
20
32
A
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
T
C
= 90 °C
I
Cpuls
40
64
Avalanche energy, single pulse
I
C
= 15 A, V
CC
= 50 V, R
GE
= 25 Ω
L = 200 µH, T
j
= 25 °C
E
AS
22
mJ
Power dissipation
T
C
= 25 °C
P
tot
200
W
Chip or operating temperature T
j
-55 ... + 150 °C
Storage temperature T
stg
-55 ... + 150